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Purity:90wt%-COOH Content:2.73wt%OD: 1-2nmLength: 1-3μmSSA:380 m2/gASH: 5wt%Tap ...

Purity:60wt%OD: 1-2nmLength: 5-30μmSSA:407 m2/gASH: 5wt%Tap density: 0.14g/cm3Tr...

Purity:60wt%-OH Content: 3.96wt%OD: 1-2nmLength: 5-30μmSSA:407 m2/gASH: 5wt%Tap ...

Purity:60wt%-COOH Content: 2.73wt%OD: 1-2nmLength: 5-30μmSSA:407 m2/gASH: 5wt%Ta...

CNTs Preparation Technology:HiPCOPurity of SWCNTs:98wt%Diameter: 0.7-1.1nmLength...

CNTs Preparation Technology:ArcPurity of SWCNTs:95wt%Diameter: 1.2-1.6nmLength: ...

CNTs Preparation Technology:ArcPurity of SWCNTs:95wt%Diameter: 1.2-1.6nmLength: ...

CNTs Preparation Technology:HiPCOPurity of semiconductor SWCNTs:99wt%Diameter: 0...

CNTs Preparation Technology:HiPCOPurity of semiconductor SWCNTs:99.9wt%Diameter:...

CNTs Preparation Technology:ArcPurity of semiconductor SWCNTs:99.9wt%Diameter: 1...

CNTs Preparation Technology:HipcoPurity of metallic SWCNTs:90wt%Diameter: 0.8-1....

形狀：可任意裁剪尺寸：1*1cm/2*2cm/5*5cm/10*10cm層數(shù)：單層晶粒：單晶/多晶,，50~300um

形狀：可任意裁剪尺寸：1*1cm/2*2cm/5*5cm/10*10cm層數(shù)：單層晶粒：單晶/多晶，50~300um

形狀：可任意裁剪尺寸：1*1cm襯底：紫銅層數(shù)：單層晶粒：單晶/多晶,，50~300um量大價(jià)格面議

形狀：可任意裁剪尺寸：1*1cm/5*5cm/10*10cm層數(shù)：單層晶粒：單晶/多晶,，50~300um

尺寸：1*1cm/5*5cm/10*10cm層數(shù)：單層晶粒：單晶/多晶，50~300um

材料簡介：三維石墨烯網(wǎng)絡(luò)是在泡沫金屬基底上通過化學(xué)氣相沉積高溫生長石墨烯薄膜層,，借助泡沫基底的三維多孔骨架,，生長成石墨烯的三維網(wǎng)絡(luò)。三維石墨烯具有體表面積大,，導(dǎo)...

材料簡介：三維石墨烯網(wǎng)絡(luò)是在泡沫金屬基底上通過化學(xué)氣相沉積高溫生長石墨烯薄膜層,，借助泡沫基底的三維多孔骨架,，生長成石墨烯的三維網(wǎng)絡(luò),。三維石墨烯具有體表面積大，導(dǎo)...

材料簡介：三維石墨烯網(wǎng)絡(luò)是在泡沫金屬基底上通過化學(xué)氣相沉積高溫生長石墨烯薄膜層,，借助泡沫基底的三維多孔骨架，生長成石墨烯的三維網(wǎng)絡(luò),。三維石墨烯具有體表面積大,，導(dǎo)...

基于SiO2/Si晶片的雙層CVD石墨烯薄膜將兩層單層CVD石墨烯膜轉(zhuǎn)移到285nm p摻雜的SiO 2 / Si晶片上尺寸：1cmx1cm; 4片將每個(gè)石墨烯...