一種是通過(guò)加熱單晶 6H-SiC 脫除 Si,，從而在 SiC 晶體表面外延生長(zhǎng)石墨烯。石墨烯和 Si 層接觸,，這種石墨烯的導(dǎo)電性受到基底影響,；另一種是利用金屬單晶中的微量碳成分，通過(guò)在超高真空下高溫退火,，金屬內(nèi)碳元素在金屬單晶表面析出石墨烯,。
Industrial ultrasonic dispersion equipment uses ultrasonic assisted Hummers method to prepare graphene oxide, which is based on the medium of liquid, adding high frequency ultrasonic vibration to the liquid. Because ultrasound is a mechanical wave, which is not absorbed by molecules, it causes molecular vibration in the process of propagation. Under the cavitation effect, that is, high temperature, high pressure, micro jet, strong vibration and other additional effects, the distance between molecules increases its average distance due to vibration, resulting in molecular breakage. With the increase of ultrasonic power, the layer spacing of graphite oxide is increasing.
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